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Ordering number : ENA1204
DBD250
SANYO Semiconductors
DATA SHEET
DBD250
Features
* * * *
Diffused Junction Silicon Diode
25.0A Single-Phase Bridge Rectifier
Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200V, 600V. Average output current : IO=25.0A.
Specifications
Absolute Maximum Ratings at Tc=25C
Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage Symbol VRM IO IFSM Tj Tstg VIS Terminals tc case, AC 1 minute Ta=40C Ta=40C, With 3003003.0mm3 Cu fin 50Hz sine wave, 1cycle Conditions DBD250C 200 6.0 25.0 400 150 --40 to +150 2 DBD250G 600 Unit V A A A C C kV
Electrical Characteristics at Tc=25C *Per Constituent element of bridge.
Parameter Forward Voltage Reverse Current Thremal Resistance Symbol VF IR Rth(j-c) Conditions IF=12.5A* VR=At each VRM* Junction-Case Ratings min typ max 1.05 10 1.5 Unit V A C / W
Note) Maximum tightening torque : 0.98Nm
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73008RB TI IM TA-0858 No. A1204-1/3
DBD250
Package Dimensions
unit : mm (typ) 7812-001
7.95 3.4
32.0 MAX 9
2.5 MIN 1.5
32.0 MAX
18.0
7.2
4.9
1.65
6.35
7.5
2.4
0.8
10.0 14.4 11.0 23.0 MAX
5 3
IF -- VF
Surge Foward Current, IFSM -- A
400
IFSM -- n
Ta=25C
350
Forward Current, IF -- A
2
50 C
300
10 7 5 3 2
Ta= 1
25C
250
50
Hz
200
150
1.0 0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
100 1.0
2
3
5
7
10
2
3
5
Forward Voltage, VF -- V
32 28
IT13662
Number of Cycles, n
7 100 IT13663
IO -- Ta
With 3003003mm3 Cu fin With heatsink
Average Output Current, IO -- A
24 20 16 12 8 4 0 0 20 40
Re
sis
Ca
tiv
pa
cit
in d ive ucti loa ve d loa
e,
d
Without heatsink
Resisti
ve, ind uctive load Capacitiv e load
80 100 120 140 160 IT13664
60
Ambient Temperature, Ta -- C
No. A1204-2/3
DBD250
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice.
PS No. A1204-3/3

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